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Transistors
2SD2620J
Silicon NPN epitaxial planar type
Unit: mm
1.60+0.05 -0.03 1.000.05
0.800.05
For low-frequency driver amplification Features
* High forward current transfer ratio hFE * Low collector to emitter saturation voltage VCE(sat) * High emitter to base voltage VEBO
0.12+0.03 -0.01
3
1.600.05 0.85+0.05 -0.03 (0.375)
1 0.270.02
2
(0.80)
(0.50)(0.50)
0 to 0.02
Absolute Maximum Ratings Ta = 25C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 100 100 15 50 20 125 125 -55 to +125 Unit V V V mA mA mW C C
5
0.70+0.05 -0.03
5
1: Base 2: Emitter 3: Collector
EIAJ: SC-89 SSMini3-F1 Package
Marking Symbol: 3B
Electrical Characteristics Ta = 25C 3C
Parameter Collector cutoff current Symbol ICBO ICEO Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Noise voltage VCBO VCEO VEBO hFE VCE(sat) fT NV Conditions VCB = 60 V, IE = 0 VCE = 60 V, IB = 0 IC = 10 A, IE = 0 IC = 1 mA, IB = 0 IE = 10 A, IC = 0 VCE = 10 V, IC = 2 mA IC = 10 mA, IB = 1 mA VCB = 10 V, IE = -2 mA, f = 200 MHz VCE = 10 V, IC = 1 mA, GV = 80 dB Rg = 100 k, Function = FLAT 100 100 15 400 0.05 200 80 1 200 0.2 V MHz mV Min Typ Max 0.1 1.0 V V V Unit A
0.10 max.
Publication date: July 2002
SJC00270BED
1
2SD2620J
PC Ta
140
45 Ta = 25C IB = 100 A 40 90 A 80 A 70 A 60 A 50 A 40 A 30 A 20 15 10 5 0 10 A 20 A
IC VCE
1
VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
IC / IB = 10
Collector power dissipation PC (mW)
120 100 80 60 40 20 0
Collector current IC (mA)
35 30 25
Ta = 85C 0.1 25C -25C
0
20
40
60
80
100 120 140
0
2
4
6
8
10
12
0.01 0.1
1
10
100
1 000
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (mA)
IC VBE
120 25C VCE = 10 V
1 000 900
hFE IC
Collector output capacitance Cob (pF)
Ta = 85C VCE = 10 V
Cob VCB
10 f = 1 MHz Ta = 25C
Forward current transfer ratio hFE
100
800 25C 700 600 500 400 300 200 100 -25C
Collector current IC (mA)
80 Ta = 85C -25C
60
40
20
0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
1
0
5
10
15
20
25
30
35
40
Base to emitter voltage VBE (V)
Collector current IC (mA)
Collector to base voltage VCB (V)
2
SJC00270BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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